NanoDay 2020 Poster 18 – Xu-Qian Zheng

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Electromechanical Coupling and Motion Transduction in β-Ga2O3 Vibrating Channel Transistors

Xu-Qian Zheng (LinkedIn)

Authors: Xu-Qian Zheng and Philip Feng

Faculty Mentor: Philip Feng, PhD

College: College of Engineering

Department: Electrical and Computer Engineering


Empowered by an ultrawide bandgap, beta gallium oxide (β-Ga2O3) crystal is an ideal material for next generation power electronics and solar-blind ultraviolet (SBUV) detection. Further, the β-Ga2O3 crystal possesses compelling mechanical properties for making mechanical devices. β-Ga2O3 vibrating channel transistors (VCTs) are an excellent platform for coupling electrical and mechanical properties of β-Ga2O3 on a single device for variety of applications that supplement the β-Ga2O3 electronics and optoelectronics. Here, we report on systematic modeling and experimental measurement of all-electronic transduction of resonant motion of nanoscale β-Ga2O3 VCTs, utilizing both direct current readout and frequency modulation (FM) down-mixing techniques. The measured and modeled β-Ga2O3 VCTs have fundamental mode resonance frequencies at ~25 MHz with quality factors (Qs) of ~100 and transconductance gm at ~0.2 nS. We analyze the signal transduction of the device while varying different device parameters, where we determine that the transistor’s gate trench depth z0 and gm play key roles in improving the all-electronic transduction and device performance. Especially, the reduction of z0 can engender a major enhancement in readout current. Further, reducing channel thickness h and increasing channel length l can also improve the readout current, though downshifting the resonance frequency at the same time. The analysis paves the way for future optimization of all-electronic transduction and integration of β-Ga2O3 resonators on chip with β-Ga2O3 electronics and optoelectronics.


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