NanoDay 2021 – Poster 27 – Paritosh Rustogi

 

Electrical Isolation Using Gasket for Next-Generation High-Channel-Density Implant-Connector Technology

Paritosh Rustogi

Authors: Paritosh Rustogi, Jack Judy

Faculty Mentor: Jack Judy, PhD

College: College of Engineering

Department: Electrical and Computer Engineering

Abstract

As neural-interfaces has advanced to higher channel counts/channel densities to improve stimulation targeting and to minimize side effects, the benefits derived by patients have also increased. Leading examples would be such as nerve interfaces used in brain-machine-interfaces (BMI) to restore sensory/motor function, nerve interfaces for sensing and controlling state-of-the-art prosthetics limbs, and even next-generation deep-brain stimulation (DBS) systems. Existing implant-packaging technology of high channel counts neural interfaces (>=100) are permanently bonded (i.e., soldering, conductive epoxy bonding, thermocompression bonding etc.), which eliminates the ability to disconnect the interface from implanted electronics to perform needed battery changes, replacement, or upgrades without disturbing interfaces that have become integrated into delicate and sensitive neural tissue. We propose a next-generation high-density implantable connector technology in which neural interfaces are connected to electronics using microgasket clamped under pressure. This approach will allow to connect neural interfaces to electronics and to be able to reconnect for any upgrade/replacement needs. We use micro/nanofabrication processes to produce microelectrode arrays and leads that will be attached to high-channel-density feedthrough arrays by high-channel-count microscale connectors. Adequate electrical isolation can be a big factor in reliable performance of implant packaging. Here, we also discuss and compare its isolation performance to the conventional methods of potting in polymers.

Poster

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