Semiconductor Device Passivation: This research program aims to develop the basic science and technology of low-temperature deposition methods that can provide reliable and reproducible passivation for compound semiconductor devices, such as pseudomorphic AlGaAs/InGaAs/GaAs PHEMTs, GaAs MESFETs, GaAs based HBTs and InGaAs/InP based HBTs, and GaN based devices. There are three major topics under investigation: Deposition of silicon-nitride based dielectrics using different precursors such as SiH4/NH3, SiH4/N2, SiD4/ N2, SiD4/ND3, and hydrogen-free dielectric, and incorporation of a D, O, or N plasma treatment into to reduce the occurrence of dangling bonds.
Optimization of the dielectric material quality with different deposition techniques and conditions. The systems considered include conventional plasma enhanced chemical vapor deposition (PECVD), down-stream electron cyclotron resonance chemical vapor deposition (ECRCVD), and inductively coupled plasma chemical vapor deposition (ICPCVD).
Characterization of device degradation mechanisms related to deposition techniques, dielectric film quality, and the hydrogen passivation effect.