{"id":2003,"date":"2017-01-25T12:53:07","date_gmt":"2017-01-25T18:53:07","guid":{"rendered":"https:\/\/www.eng.ufl.edu\/nimet\/?page_id=2003"},"modified":"2026-04-14T14:00:00","modified_gmt":"2026-04-14T18:00:00","slug":"fan-ren","status":"publish","type":"page","link":"https:\/\/www.eng.ufl.edu\/nimet\/people-2\/coe\/fan-ren\/","title":{"rendered":"Fan Ren"},"content":{"rendered":"
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Distinguished Professor, Department of Chemical Engineering
<\/strong>PhD<\/p>\n\n\n\n

Department of Chemical Engineering<\/a> | Herbert Wertheim College of Engineering<\/a><\/p>\n\n\n\n

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Semiconductor Device Passivation<\/strong>: This research program aims to develop the basic science and technology of low-temperature deposition methods that can provide reliable and reproducible passivation for compound semiconductor devices, such as pseudomorphic AlGaAs\/InGaAs\/GaAs PHEMTs, GaAs MESFETs, GaAs based HBTs and InGaAs\/InP based HBTs, and GaN based devices. There are three major topics under investigation: Deposition of silicon-nitride based dielectrics using different precursors such as SiH4\/NH3, SiH4\/N2, SiD4\/ N2, SiD4\/ND3, and hydrogen-free dielectric, and incorporation of a D, O, or N plasma treatment into to reduce the occurrence of dangling bonds.<\/p>\n\n\n\n

Optimization of the dielectric material quality with different deposition techniques and conditions. The systems considered include conventional plasma enhanced chemical vapor deposition (PECVD), down-stream electron cyclotron resonance chemical vapor deposition (ECRCVD), and inductively coupled plasma chemical vapor deposition (ICPCVD).<\/p>\n\n\n\n

Characterization of device degradation mechanisms related to deposition techniques, dielectric film quality, and the hydrogen passivation effect.<\/p>\n\n\n\n

Publications:<\/strong><\/p>\n\n\n\n