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Frequency Tuning in Few-Layer MoTe2 Suspended Channel Transistors and Nanoelectromechanical Resonators S M Enamul Hoque Yousuf (LinkedIn) Authors: S M Enamul Hoque Yousuf, Xu-Qian Zheng, Xia Liu, Arnob Islam, and Philip X.-L. Feng Faculty Mentor: Philip Feng, PhD College: Engineering Department: Electrical and Computer Engineering |
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AbstractMolybdenum ditelluride (MoTe2), having unique semiconducting, metallic, and superconducting properties, has recently received significant research interest in different applications, such as field effect transistors, memory, light detection, and resonators. MoTe2 is known to have two stable phases with a thickness dependent tunable bandgap in the range of 0.83 eV (bulk) to 1.1 eV (monolayer). Since the monolayer bandgap of MoTe2 is similar to silicon, MoTe2 is compatible with current silicon technology and also makes it suitable for near IR light detection. Here, we demonstrate the first MoTe2 suspended channel transistor and resonator which can be explored for resonant sensing applications and signal processing functions. We use Raman spectroscopy probing with λ = 532 nm to identify the constituent flakes. We observe a unipolar p-type behavior of the fabricated device with IOn/IOff > 10^4. We measure the resonant frequency of the resonator optically and find resonance frequency as 9.15 MHz with quality factor ~264. The electromechanical gate tuning of ∆f/f = 13% is observed by varying back-gate voltage from 0 to -16 V. Currently, we are working on the near IR light detection using the fabricated MoTe2 devices on sapphire substrate using local gate configuration to compare the result with the state-of-the-art IR detectors. Our findings will pave the way for future room temperature IR detectors compatible with on-chip integration by utilizing suspended channel transistors platform.
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