NanoDay 2021 – Poster 26 – Wen Sui and Enamul Yousuf

 

Wen Sui

Pressure Response and Air Damping of β-Ga2O3 Nanomechanical Resonators

Wen Sui and Enamul Yousuf

Authors: Wen Sui, S M Enamul Hoque Yousuf, Xu-Qian Zheng, Philip X.-L. Feng

Faculty Mentor: Philip Feng, PhD

College: College of Engineering

Department: Electrical and Computer Engineering

Abstract

We report on the first experimental study of pressure response and air damping of beta gallium oxide (β-Ga2O3) nanomechanical resonators. We fabricate the β-Ga2O3 resonators by delivering very thin β-Ga2O3 nanobelts to prefabricated microtrenches using a dry transfer technique. We have demonstrated pressure dependent resonance frequency of β-Ga2O3 NEMS Transducer at high Temperature up to 300 ℃. We observe a hysteresis in the pressure dependence of resonance frequency as the pressure is tuned up and down in the range of ~10mTorr to 1 atm. Hysteresis in the resonance frequency as sweeping the pressure up and down is suppressed at high temperature. At high temperature, the desorption is accelerated so the device may reflect the real time change caused by desorption. Quality (Q) factor and air damping are also examined. This work reveals important information toward developing β-Ga2O3 devices for pressure sensing.

Poster