Retaining High Q Factors in Electrode-less AlN-on-Si Bulk Mode Resonators with Non-Contact Electrical Drive S M Enamul Hoque Yousuf Authors: S M Enamul Hoque Yousuf, Yuncong Liu, Jaesung Lee, Philip Feng Faculty Mentor: Philip Feng, PhD College: College of Engineering Department: Electrical and Computer Engineering |
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AbstractThis poster reports on experimental study of transduction techniques of AlN-on-Si (AlN/Si) heterostructure MEMS resonators with both bulk and flexural modes, and comparison of their quality (Q) factors and energy losses induced by different resonant motion excitation schemes. For AlN/Si MEMS resonators without deposited top electrodes, we have devised and demonstrated a new scheme with external electrical drive enabled by a non-contact overhanging electrode, to replace the otherwise required optical excitation. For the AlN/Si resonator’s 10MHz bulk mode, almost same Q~26,000 is obtained with both the new electrical drive and optical drive, while the electrical drive enables the detection of a ~1MHz mode that is not visible when driven optically. For Si-only device, Q=257,300 is attained with the new electrical drive, noticeably higher than the Q=212,225 with optical drive, suggesting electrical drive induces less energy loss than the optical drive for Si-only device.
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Poster
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